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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2616 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i MAX 500 400 7 10 20 5 UNIT V V .cn mi e V A ICM Collector Current-Peak A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 100 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2616 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 0.2A; RBE= ; L= 100mH IC= 5A; IB1=-IB2= 1A, VBE= -5V; L=180H,clamped IC= 5A; IB= 1A B 400 V VCEX(SUS) Collector-Emitter Sustainig Voltage 400 V VCE(sat) Collector-Emitter Saturation Voltage 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.7 V hFE-1 DC Current Gain IC= 5A; VCE= 5V 15 hFE-2 DC Current Gain IC= 10A; VCE= 5V ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current Switching Times w w scs .i w VCB= 400V; IE= 0 VCE= 350V; RBE= .cn mi e 7 0.1 mA 0.1 mA VEB= 5V; IC= 0 0.1 mA tr Rise Time IC= 10A; IB1= -IB2= 2A, VCC 150V 1.0 s tstg Storage Time 2.5 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn |
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